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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 450V (Min) *High Switching Speed APPLICATIONS *Switching regulator and high voltage switching applications. *High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 600 V 450 V 7 V 10 A 40 W 2 .cn mi e IC Collector Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3563 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 450 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V A Collector Cutoff Current VCB= 500V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain ww w scs .i IC= 0.5A; VCE= 5V IC= 4A; VCE= 5V .cn mi e 20 8 1 mA isc Websitewww.iscsemi.cn 2 |
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